1/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.03 - rev.a 4v drive pch mosfet RRQ030P03 z structure z dimensions (unit : mm) silicon p-channel mosfet z features 1) low on-resistance. 2) high power package. 3) high speed switching. z applications z equivalent circuit switching z packaging specifications taping RRQ030P03 type tr 3000 package basic ordering unit (pieces) code z absolute maximum ratings (ta=25 c) parameter v v a a w c a a c v dss v gss i s p d tch i d i sp i dp tstg symbol ? 30 20 ? 1 ? 12 1.25 150 ? 55 to + 150 limits unit ? 1 pw 10 s, duty cycle 1% ? 2 when mounted on a ceramic board drain ? source voltage gate ? source voltage drain current source current (body diode) total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 ? 1 ? 2 3 12 z thermal resistance parameter c / w rth(ch-a) symbol limits unit c hannel to ambient ? when mounted on a ceramic board. 100 ? each lead has same dimensions tsmt6 0.4 (1) (5) (3) (6) (2) (4) 1pin mark 2.8 1.6 1.9 2.9 0.95 0.95 0 ~ 0.1 0.16 0.85 1.0max 0.7 0.3 ~ 0.6 abbreviated symbol : ua ? 1 esd protection diode (1)drain (2)drain (3)gate (4)sourc e (5)drain (6)drain ? 2 body diode (1) ? 1 ? 2 (2) (3) (4) (5) (6)
RRQ030P03 data sheet 2/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.03 - rev.a z electrical characteristics (ta=25 c) parameter symbol i gss v (br)dss i dss v gs(th) r ds(on) c iss y fs c oss c rss min. ? ? 30 ? ? 1.0 ? ? 2.4 ? ? ? ? ? ? 55 480 ? 70 70 10 ? ? 1 ? 2.5 75 ? 85 115 ? ? ? ? a v gs = 20v, v ds = 0v i d = ? 1 , v gs = 0v v ds = ? 30v, v gs = 0v v ds = ? 10 v, i d = ? 3a v ds = ? 10v, i d = ? 1 i d = ? 3 a, v gs = ? 10 v v ds = ? 10v v gs = 0v f = 1mhz v a v m ? m ? pf s pf pf t d(on) ? 7 ? ns t r ? 18 ? ns t d(off) ? 50 ? ns t f ? 35 ? ns typ. max. unit conditions gate-source leakage gate threshold voltage foward transfer admittance input capacitance output capacitance reverse transfer capacitance tur n-on delay time tur n-off delay time rise time fall time drain-source breakdown voltage static drain-source on-state resistance zero gate voltage drain current total gate charge gate-source charge gate-drain charge qg qgs qgd m ? nc nc nc ? ? ? ? ? ? ? 95 5.2 1.6 1.6 125 ma, ma i d = ? 1.5 a, v gs = ? 4.5 v i d = ? 1.5 a, v gs = ? 4 v ? ? ? ? ? ? ? ? ? ? pulsed v dd ? 15v i d = ? 1.5a v gs = ? 10 v r l 10 ? r g = 10 ? v dd ? 15v i d = ? 3a v gs = ? 5 v r l 5 ? r g = 10 ? z body diode characteristics (source-drain) (ta=25 c) v sd ??? 1.2 v i s = ? 3a, v gs =0v forward voltage ? pulsed parameter symbol min. typ. max. unit conditions ?
RRQ030P03 data sheet 3/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.03 - rev.a z electrical characteristic curves 0 0.5 1 1.5 2 2.5 3 00.20.40.60.81 -3.2v -2.8v -10v -4.5v -3.0v -3.8v ta= 25c pulsed v gs = - 2.5v 0.001 0.01 0.1 1 10 01234 v ds = - 10v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 10 100 1000 0.1 1 10 v gs = -4.0v v gs = -4.5v v gs = - 10v ta=25c pulsed 0.01 0.1 1 10 00.20.40.60.811.2 v gs =0v pulsed ta=125c ta= 75c ta= 25c ta= - 25c 0 0.5 1 1.5 2 2.5 3 0246810 -3.2v - 10v -4.5v -3.6v -3.0v v gs = -2.8v ta=25c pulsed 10 100 1000 0.1 1 10 v gs = -4.5v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 10 100 1000 0.1 1 10 v gs = -10v pulsed ta= 125c ta= 75c ta= 25c ta= -25c 0.1 1 10 0.1 1 10 v ds = -10v pulsed ta= - 25c ta= 25c ta= 75c ta= 125c 10 100 1000 0.1 1 10 v gs = -4.0v pulsed ta=125c ta=75c ta=25c ta= -25c fig .1 typical output char acter istics( ) fig .2 typical output char acter istics( ) fig .3 typical transfer characteristics fig .4 static drain- sour ce on- state resistance vs. drain current( ) fig .5 static dr ain-source on- state resistance vs. drain current( ) fig .6 static dr ain-sour ce on- state resistance vs. drain current( ) fig .7 static drain- sour ce on- state resistance vs. drain current( ) fig .9 reverse drain cur rent vs. sourse-drain voltage fig .8 for war d tr ansfer admittance vs. drain current drain current : -i d [a] drain-source voltage : -v ds [v] drain-source voltage : -v ds [v] drain current : -i d [a] drain current : -i d [a] gate-source voltage : -v gs [v] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] forward transfer admittance : |yfs| [s] drain-current : -i d [a] reverse drain current : -is [a] source-drain voltage : -v sd [v]
RRQ030P03 data sheet 4/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.03 - rev.a z measurement circuits f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10 % 10% 50% 50% pulse width v gs v ds t on t off tr t d(on) tf t d(off) fig.2-1 gate charge measurement circuit v gs i g(const.) r g v ds d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd 0 100 200 300 0246810 ta=25c pulsed i d = -1.5a i d = -3.0a 0 2 4 6 8 10 0246810 ta= 25c v dd = - 15v i d = -3.0a r g =10 ? pulsed 10 100 1000 0.01 0.1 1 10 100 ciss crss ta= 25c f=1mhz v gs =0v coss 1 10 100 1000 0.01 0.1 1 10 t r t d ( on) t d (off) ta= 25c v dd = - 15v v gs =-10v r g =10 ? pulsed t f fig.10 static drain-source on-state resistance vs. gate source voltage fig .12 dynamic input char acteristics fig .13 typical capacitance vs. drain-source voltag e fig .11 switching char acteristics static drain-source on-state resistance : r ds (on)[m ? ] gate-source voltage : -v gs [v] switching time : t [ns] drain-current : -i d [a] gate-source voltage : -v gs [v] total gate charge : qg [nc] drain-source voltage : -v ds [v] capacitance : c [pf]
r0039 a www.rohm.com ? 2009 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, is permitted without the consent of rohm co.,ltd. the content specied herein is subject to change for improvement without notice. the content specied herein is for the purpose of introducing rohm's products (hereinafter "products"). if you wish to use any such product, please be sure to refer to the specications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. great care was taken in ensuring the accuracy of the information specied in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no responsibility for such damage. the technical information specied herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. the products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, ofce-automation equipment, commu- nication devices, electronic appliances and amusement devices). the products specied in this document are not designed to be radiation tolerant. while rohm always makes efforts to enhance the quality and reliability of its products, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the products safety measures to guard against the possibility of physical injury, re or any other damage caused in the event of the failure of any product, such as derating, redundancy, re control and fail-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of the prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). rohm shall bear no responsibility in any way for use of any of the products for the above special purposes. if a product is intended to be used for any such special purpose, please contact a rohm sales representative before purchasing. if you intend to export or ship overseas any product or technology specied herein that may be controlled under the foreign exchange and the foreign trade law, you will be required to obtain a license or permit under the law.
|
